TP65H150G4LSG数据手册Transphorm中文资料规格书

描述 Description

The TP65H150G4LSG 650V 150mΩ Gallium Nitride (GaN) FET is a normally-off device built using Transphorm’s Gen IV platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.

Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.

The TP65H150G4LSG is offered in an industry-standard PQFN88 with a common source package configuration.