AO7413L

P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAO7413usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatecharge,andoperationwithgatevoltagesaslowas1.8V,inthesmallSOT323footprint.Itcanbeusedforawidevarietyofapplications,includingloadswitching,lowcurrentinvertersandlow

HD7413

TTLHD74/HD74SSeries

IRF7413

GenerationVTechnology

GenerationVTechnology UltraLowOn-Resistance N-ChannelMosfet SurfaceMount AvailableinTape&Reel Dynamicdv/dtRating FastSwitching 100RgTested Lead-Free Application Features VDS(V)=30V RDS(ON)12m(VGS=10V) RDS(ON)17m(VGS=4.5V)

IRF7413

N-ChannelMOSFET

■Features ●VDS(V)=30V ●ID=12A(VGS=10V) ●RDS(ON)

IRF7413

PowerMOSFET(Vdss=30V,Id=12A)

SMPSMOSFET Benefits •LowGatetoDrainChargetoReduce SwitchingLosses •FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) •FullyCharacterizedAvalancheVoltage andCurrent Applications •HighfrequencyDC-DCconverters

IRF7413

MOSFET

Application GenerationVTechnology UltraLowOn-Resistance N-ChannelMosfet SurfaceMount AvailableinTape&Reel Dynamicdv/dtRating FastSwitching 100RgTested Lead-Free Features VDS(V)=30V RDS(ON)

IRF7413A

PowerMOSFET(Vdss=30V,Rds(on)=0.0135ohm)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF7413GPBF

UltraLowOn-Resistance

IRF7413GTRPBF

GenerationVTechnology

IRF7413PBF

ULTARLOWONRESISTANCE