丝印：TK4P60D；Package：DPAK；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 1.4 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 2.5 S (typ.) (3) Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) (4) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1

文件：238.37 Kbytes 页数：9 Pages

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东芝

丝印：TK4P60D；Package：DPAK；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 1.4 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 2.5 S (typ.) (3) Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) (4) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1

文件：238.37 Kbytes 页数：9 Pages

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丝印：DPAK；Package：TO-252；iscN-Channel MOSFET Transistor

文件：333.42 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：DPAK；Package：TO-252；iscN-Channel MOSFET Transistor

文件：333.77 Kbytes 页数：2 Pages

ISC

无锡固电

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

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N-Channel MOSFET uses advanced trench technology

文件：1.43545 Mbytes 页数：5 Pages

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文件：1.07807 Mbytes 页数：9 Pages

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Switching Regulator Applications

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Power MOSFET

文件：1.07806 Mbytes 页数：9 Pages

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