丝印：K024N60Z1；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.02 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 3.84 mA)

文件：608.29 Kbytes 页数：9 Pages

TOSHIBA

东芝

丝印：K024Z60Z1；Package：TO-247-4L；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.02 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 3.84 mA)

文件：632.6 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K040N60Z1；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.033 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 2.4 mA)

文件：742.11 Kbytes 页数：9 Pages

TOSHIBA

东芝

丝印：K040N65Z；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.033 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 2.85 mA)

文件：479.13 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K040Z60Z1；Package：TO-247-4L；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.033 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 2.4 mA)

文件：764.84 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K040Z65Z；Package：TO-247-4L；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.033 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 2.85 mA)

文件：419.54 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K042N65Z5；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 160 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.035 Ω (typ.) (3) High-speed switching properties with lower capacitance. (4) Enhancement mode: Vth = 3.5 to 4.5 V (VDS = 10 V, ID = 2.85 mA

文件：762.5 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K055U60Z1；Package：TOLL；MOSFETs Silicon N-Channel MOS (DTMOS)

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.046 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.69 mA)

文件：740.29 Kbytes 页数：9 Pages

TOSHIBA

东芝

丝印：K063N60Z1；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.053 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.47 mA)

文件：620.31 Kbytes 页数：9 Pages

TOSHIBA

东芝

丝印：K063Z60Z1；Package：TO-247-4L；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.053 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.47 mA)

文件：644.14 Kbytes 页数：10 Pages

TOSHIBA

东芝