丝印：K040Z65Z；Package：TO-247-4L；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.033 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 2.85 mA)

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TOSHIBA

东芝

Power MOSFET (N-ch 500V

Application Scope：Switching Voltage Regulators\nPolarity：N-ch\nGeneration：DTMOSⅥ\nInternal Connection：Single\nRoHS Compatible Product(s) (#)：Please contact us. Drain-Source voltage VDSS 650 V \nGate-Source voltage VGSS +/-30 V \nDrain current ID 57 A \nPower Dissipation PD 360 W ;

Toshiba

东芝

TO-220F

TOSHIBA/东芝

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TO-220F

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TO-220

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上传：深圳庞田科技有限公司