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TIP141NPN

SILICONPLANARDARLINGTONPOWERTRANSISTORS

DesignedforGeneralPurposeAmplifierandLowFrequencySwitchingApplications TO-3PNNonIsolated PlasticPackage

CDIL

Continental Device India Limited

TIP141-S

DesignedforComplementaryUsewithTIP145,TIP146andTIP147

BournsBourns Electronic Solutions

伯恩斯

TIP141T

SiliconNPNDarlingtonPowerTransistor

Features •MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=4V,lc=5A(Min.) •IndustrialUse •ComplementtoTIP145T/146T/147T

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

TIP141T

NPNEpitaxialSiliconDarlingtonTransistor

Features •MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=4V,lc=5A(Min.) •IndustrialUse •ComplementtoTIP145T/146T/147T

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

TIP141T

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors

TAI-SAW

TAI-SAW TECHNOLOGY CO., LTD.

TIP141T

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors -HighDCCurrentGain:hFE=1000@VCE=2V,IC=5A(Min.) -Collector-EmitterSustainingVoltage -LowCollector-EmitterSaturationVoltage -IndustrialUse -ComplementarytoTIP145/146/147

SEMIHOW

SemiHow Co.,Ltd.

TIP141T

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors

Features •MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=4V,IC=5A(Min.) •IndustrialUse •ComplementtoTIP145T/146T/147T

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

TIP141T

POWERTRANSISTORS(10A,60-100V,80W)

DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforgeneral-purposeamplifierandlowspeedswitchingapplications. 10AMPEREDARLINGTIOONCOM:EMEMTARYSILICONPOWERTRANSISTORS60-100VOLTS80WATTS TIP140T,TIP141T,TIP142T-->NPN TIP145T,TIP146T,TIP147T--->PNP

MOSPECMospec Semiconductor

统懋统懋半导体股份有限公司

TIP141T

iscSiliconNPNDarlingtonPowerTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

TLP141G

Photo−TransistorProgrammableControllers

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

详细参数

  • 型号:

    TIP141LTU

  • 功能描述:

    达林顿晶体管

  • RoHS:

  • 制造商:

    Texas Instruments

  • 配置:

    Octal

  • 晶体管极性:

    NPN 集电极—发射极最大电压

  • VCEO:

    50 V 发射极 - 基极电压

  • VEBO:

    集电极—基极电压

  • 最大直流电集电极电流:

    0.5 A

  • 最大工作温度:

    + 150 C

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    SOIC-18

  • 封装:

    Reel

供应商型号品牌批号封装库存备注价格
BNS
1535+
310
询价
BNS
23+
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
FAIRCHILD
05+
原厂原装
4852
只做全新原装真实现货供应
询价
ST/FSC
17+
TO-220
6200
询价
ST
11+
TO-220
8000
全新原装,绝对正品现货供应
询价
ST
24+
TO-220
1000
原装现货热卖
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
ST
1738+
TO-220
8529
科恒伟业!只做原装正品,假一赔十!
询价
FAIRCHI
24+
TO220
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
ST/意法
23+
TO-220
50000
全新原装正品现货,支持订货
询价
更多TIP141LTU供应商 更新时间2025-5-8 16:00:00