丝印：TIP112；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation Voltage Industrial Use

文件：1.41633 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

丝印：TIP112；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation Voltage Industrial Use

文件：1.41633 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

NPN Transistor Bare Die

Features Collector current up to 2A Low VCE(sat) Very high hFE Solderable back metal High Reliability tested grades for Military + Space

文件：214.04 Kbytes 页数：2 Pages

SS

SILICON DARLINGTON POWER TRANSISTORS

SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are designed for general purpose amplifier and low-speed switching applications. PNP complements are TIP115-116-117 Compliance to RoHS.

文件：103.57 Kbytes 页数：3 Pages

COMSET

Silicon NPN transistor in a TO-220 Plastic Package.

Descriptions Silicon NPN transistor in a TO-220 Plastic Package. Features Complement to TIP117. Applications Medium power linear switching applications.

文件：1.25135 Mbytes 页数：6 Pages

FOSHAN

蓝箭电子

DARLINGTON TRANSISTOR (NPN)

TO-220-3L Plastic-Encapsulate Transistors FEATURES ● High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) ● Low Collector-Emitter Saturation Voltage ● Industrial Use

文件：286.69 Kbytes 页数：2 Pages

JIANGSU

长电科技

PLASTIC POWER TRANSISTORS

Intended for use in Medium Power Linear and Switching Applications

文件：271.16 Kbytes 页数：3 Pages

CDIL

Silicon Power darlington Complementary transistors

文件：97.94 Kbytes 页数：2 Pages

Central

PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS

文件：99.23 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

POWER TRANSISTORS(2.0A,60-100V,50W)

文件：146.97 Kbytes 页数：3 Pages

MOSPEC

统懋