丝印：TIP127；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES Medium Power Complementary Silicon Transistors

文件：1.78214 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：TIP127；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES Medium Power Complementary Silicon Transistors

文件：1.78214 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：D2PAK；Package：TO-263；isc Silicon PNP Darlington Power Transistor

文件：273.88 Kbytes 页数：2 Pages

ISC

无锡固电

PNP Transistor Bare Die

Features: Collector current up to 5A Low VCE(sat) Very high hFE Solderable back metal High Reliability tested grades for Military + Space

文件：210.67 Kbytes 页数：2 Pages

SS

PNP Darlington Transistors

■ Features ● Collector Current Capability ICM=-5A ● Collector Emitter Voltage VCEO=-100V ● Medium Power Complementary Silicon Transistors

文件：4.49309 Mbytes 页数：2 Pages

TUOFENG

拓锋半导体

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

文件：251.64 Kbytes 页数：6 Pages

Motorola

摩托罗拉

PNP SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP120, TIP121 and TIP122 ● 65 W at 25°C Case Temperature ● 5 A Continuous Collector Current ● Minimum hFE of 1000 at 3 V, 3 A

文件：105.7 Kbytes 页数：6 Pages

POINN

Power Innovations Ltd

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Features ■ Low collector-emitter saturation voltage ■ Comp

文件：53.42 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

POWER TRANSISTORS(5.0A,60-100V,65W)

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

文件：206.87 Kbytes 页数：4 Pages

MOSPEC

统懋

PNP SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)

PNP SILICON DARLINGTON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS

文件：65.16 Kbytes 页数：1 Pages

WINGS

永盛电子