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TIP125

丝印:TIP125;Package:TO-220-3L;TO-220-3L Plastic-Encapsulate Transistors

FEATURES Medium Power Complementary Silicon Transistors

文件:1.78214 Mbytes 页数:4 Pages

DGNJDZ

南晶电子

TIP125

丝印:TIP125;Package:TO-220-3L;TO-220-3L Plastic-Encapsulate Transistors

FEATURES Medium Power Complementary Silicon Transistors

文件:1.78214 Mbytes 页数:4 Pages

DGNJDZ

南晶电子

TIP125

Plastic-Encapsulated Transistors

PLASTIC POWER TRANSISTORS High Power Switching, Hammer Drive, Pulse Motor Drive and Inductive Load Drive Applications

文件:57.97 Kbytes 页数:1 Pages

TEL

TIP125

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS High Power Switching, Hammer Drive, Pulse Motor Drive and Inductive Load Drive Applications

文件:80.3 Kbytes 页数:3 Pages

TEL

TIP125

Monolithic Construction With Built In Base-Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP120/121/122

文件:510.76 Kbytes 页数:5 Pages

SEMIHOW

TIP125

Monolithic Construction With Built In Base-Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP120/121/122

文件:510.76 Kbytes 页数:5 Pages

TAI-SAW

嘉硕科技

TIP125

Darlington Power Transistors (PNP)

Darlington Power Transistors (PNP) Features • Designed for general-purpose amplifier and low speed switching applications • RoHS Compliant

文件:243.33 Kbytes 页数:4 Pages

TAITRON

TIP125

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Features ■ Low collector-emitter saturation voltage ■ Comp

文件:53.42 Kbytes 页数:4 Pages

STMICROELECTRONICS

意法半导体

TIP125

Silicon PNP Darlington Power Transistors

Features • Mounting Torgue: 5 in-lbs Maximum • The complementary NPN types are the TIP121/2/3 respectively • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 •

文件:163.14 Kbytes 页数:2 Pages

MCC

TIP125

TO-220-3L Plastic-Encapsulate Transistors

TO-220-3L Plastic-Encapsulate Transistors TIP120,121,122 Darlington TRANSISTOR (NPN) TIP125,126,127 Darlington TRANSISTOR (PNP) FEATURES ● Medium Power Complementary Silicon Transistors

文件:1.46806 Mbytes 页数:2 Pages

DGNJDZ

南晶电子

晶体管资料

  • 型号:

    TIP125

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-N+Darl+Di

  • 性质:

    低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 封装形式:

    直插封装

  • 极限工作电压:

    60V

  • 最大电流允许值:

    5A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    3

  • 可代换的型号:

    BD266,BD646,BD698,BD898,BD24A,BDW64A,FC75B,

  • 最大耗散功率:

    65W

  • 放大倍数:

    β>1000

  • 图片代号:

    B-10

  • vtest:

    60

  • htest:

    999900

  • atest:

    5

  • wtest:

    65

详细参数

  • 型号:

    TIP125

  • 功能描述:

    达林顿晶体管 PNP Epitaxial Darl

  • RoHS:

  • 制造商:

    Texas Instruments

  • 配置:

    Octal

  • 晶体管极性:

    NPN 集电极—发射极最大电压

  • VCEO:

    50 V 发射极 - 基极电压

  • VEBO:

    集电极—基极电压

  • 最大直流电集电极电流:

    0.5 A

  • 最大工作温度:

    + 150 C

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    SOIC-18

  • 封装:

    Reel

供应商型号品牌批号封装库存备注价格
ST(意法半导体)
24+
TO-220
942
原厂订货渠道,支持BOM配单一站式服务
询价
STM
15+
原厂原装
26600
进口原装现货假一赔十
询价
ST/意法
24+
TO-220
2000
全新原装深圳仓库现货有单必成
询价
ST/意法
25+
TO-220
45000
ST/意法全新现货TIP135/TIP125即刻询购立享优惠#长期有排单订
询价
ST(意法)
25+
N/A
18798
原装正品现货,原厂订货,可支持含税原型号开票。
询价
MOT
05+
原厂原装
4483
只做全新原装真实现货供应
询价
FAIRCHILD
24+
TO-220
8866
询价
STM
24+/25+
TO-220AB
1500
原装正品现货库存价优
询价
ST/进口原
17+
TO-220
6200
询价
DISCRETE
50
STM
26600
询价
更多TIP125供应商 更新时间2026-1-17 22:59:00