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TIP126

丝印:TIP126;Package:TO-220-3L;TO-220-3L Plastic-Encapsulate Transistors

FEATURES Medium Power Complementary Silicon Transistors

文件:1.78214 Mbytes 页数:4 Pages

DGNJDZ

南晶电子

TIP126

丝印:TIP126;Package:TO-220-3L;TO-220-3L Plastic-Encapsulate Transistors

FEATURES Medium Power Complementary Silicon Transistors

文件:1.78214 Mbytes 页数:4 Pages

DGNJDZ

南晶电子

TIP126

Darlington Transistors

Features • Designed for general-purpose amplifier and low speed switching applications • Collector-emitter sustaining voltage - Vceo(sus) = 60V (minimum) - TIP120, TIP125 80V (minimum) - TIP121, TIP126 100V (minimum) - TIP122, TIP127 • Collector-emitter saturation voltage - Vce(sat) = 2V (max

文件:1.13386 Mbytes 页数:5 Pages

MULTICOMP

易络盟

TIP126

POWER TRANSISTORS(5.0A,60-100V,65W)

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

文件:206.87 Kbytes 页数:4 Pages

MOSPEC

统懋

TIP126

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

文件:251.64 Kbytes 页数:6 Pages

MOTOROLA

摩托罗拉

TIP126

PNP SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP120, TIP121 and TIP122 ● 65 W at 25°C Case Temperature ● 5 A Continuous Collector Current ● Minimum hFE of 1000 at 3 V, 3 A

文件:105.7 Kbytes 页数:6 Pages

POINN

TIP126

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Features ■ Low collector-emitter saturation voltage ■ Comp

文件:53.42 Kbytes 页数:4 Pages

STMICROELECTRONICS

意法半导体

TIP126

PNP (MEDIUM POWER LINEAR SWITCHING APPLICATIONS)

MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complement to TIP121

文件:242.23 Kbytes 页数:6 Pages

SAMSUNG

三星

TIP126

Medium Power Linear Switching Applications

PNP Epitaxial Darlington Transistor Features • Medium Power Linear Switching Applications • Complementary to TIP120 / TIP121 / TIP122

文件:45.71 Kbytes 页数:4 Pages

FAIRCHILD

仙童半导体

TIP126

Si-Epitaxial PlanarTransistors

Si-Epitaxial PlanarTransistors • Collector current 5 A • Plastic case TO-220AB • Weight approx. 2.2 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

文件:49.48 Kbytes 页数:2 Pages

DIOTEC

德欧泰克

晶体管资料

  • 型号:

    TIP126

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-N+Darl+Di

  • 性质:

    低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 封装形式:

    直插封装

  • 极限工作电压:

    80V

  • 最大电流允许值:

    5A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    3

  • 可代换的型号:

    BD266A,BD648,BD700,BD900,BDW24B,BDW64B,FC75B,

  • 最大耗散功率:

    65W

  • 放大倍数:

    β>1000

  • 图片代号:

    B-10

  • vtest:

    80

  • htest:

    999900

  • atest:

    5

  • wtest:

    65

详细参数

  • 型号:

    TIP126

  • 功能描述:

    达林顿晶体管 PNP Epitaxial Darl

  • RoHS:

  • 制造商:

    Texas Instruments

  • 配置:

    Octal

  • 晶体管极性:

    NPN 集电极—发射极最大电压

  • VCEO:

    50 V 发射极 - 基极电压

  • VEBO:

    集电极—基极电压

  • 最大直流电集电极电流:

    0.5 A

  • 最大工作温度:

    + 150 C

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    SOIC-18

  • 封装:

    Reel

供应商型号品牌批号封装库存备注价格
ST
24+
TO220
66500
只做原装进口现货
询价
onsemi
25+
TO-220-3
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
询价
MOT
05+
原厂原装
5805
只做全新原装真实现货供应
询价
24+
TO-220
10000
全新
询价
ST
11+
TO-220
8000
全新原装,绝对正品现货供应
询价
FAIRCHILD
2016+
TO-220
3500
只做原装,假一罚十,公司可开17%增值税发票!
询价
ST
17+
TO-220
6200
询价
ST
16+
TO-220
10000
全新原装现货
询价
ST
25+
TO-220
37
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
15800
24+
TO220/TO263
6868
原装现货,可开13%税票
询价
更多TIP126供应商 更新时间2026-3-10 8:18:00