SILICON TRIACS

● Sensitive Gate Triacs ● 6 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 5 mA (Quadrants 1 - 3)

文件：67.32 Kbytes 页数：4 Pages

POINN

SILICON BIDIRECTIONAL TRIODE THYRISTOR

DESCRIPTION This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarity of gate signal with main Terminal 2 at either polarity. • 6 A RMS • Glass Passivated Wafer • 100 V to 800 V Off-State Voltage • Max IGT of 5 mA (Qua

文件：209.09 Kbytes 页数：3 Pages

COMSET

SILICON BIDIRECTIONAL TRIODE THYRISTOR

DESCRIPTION This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarity of gate signal with main Terminal 2 at either polarity. • 6 A RMS • Glass Passivated Wafer • 100 V to 800 V Off-State Voltage • Max IGT of 5 mA (Qua

文件：209.09 Kbytes 页数：3 Pages

COMSET

SILICON BIDIRECTIONAL TRIODE THYRISTOR

DESCRIPTION This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarity of gate signal with main Terminal 2 at either polarity. • 6 A RMS • Glass Passivated Wafer • 100 V to 800 V Off-State Voltage • Max IGT of 5 mA (Qua

文件：209.09 Kbytes 页数：3 Pages

COMSET

SILICON TRIACS

● Sensitive Gate Triacs ● 6 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 5 mA (Quadrants 1 - 3)

文件：67.32 Kbytes 页数：4 Pages

POINN

SILICON BIDIRECTIONAL TRIODE THYRISTOR

DESCRIPTION This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarity of gate signal with main Terminal 2 at either polarity. • 6 A RMS • Glass Passivated Wafer • 100 V to 800 V Off-State Voltage • Max IGT of 5 mA (Qua

文件：209.09 Kbytes 页数：3 Pages

COMSET

SILICON TRIACS

● Sensitive Gate Triacs ● 6 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 5 mA (Quadrants 1 - 3)

文件：67.32 Kbytes 页数：4 Pages

POINN

SILICON TRIACS

● Sensitive Gate Triacs ● 6 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 5 mA (Quadrants 1 - 3)

文件：67.32 Kbytes 页数：4 Pages

POINN

SILICON BIDIRECTIONAL TRIODE THYRISTOR

DESCRIPTION This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarity of gate signal with main Terminal 2 at either polarity. • 6 A RMS • Glass Passivated Wafer • 100 V to 800 V Off-State Voltage • Max IGT of 5 mA (Qua

文件：209.09 Kbytes 页数：3 Pages

COMSET

SILICON TRIACS

● Sensitive Gate Triacs ● 6 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 5 mA (Quadrants 1 - 3)

文件：67.32 Kbytes 页数：4 Pages

POINN