N-Channel IGBT

文件：78.05 Kbytes 页数：6 Pages

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安森美半导体

IGBT，N 沟道，400V，150A，饱和压=3.8V，单 ECH8

The 400V/150ASingle N-channel IGBT with built-in G-S protection diode in the ECH8 package, 8.12mm2(Mounting Area)×0.9mm(H). • Low-saturation voltage\n• High efficiency\n• Low voltage drive (2.5V)\n• Easy to drive\n• Enhansment type\n• Easy to attach\n• Built-in Gate to Emitter protection diode\n• Strong to ESD\n• Mounting Height 0.9mm, Mounting Area 8.12mm2\n• Small package\n• dv / dt guarantee\n• up to CM 200µF\n• Halog;

ONSEMI

安森美半导体

N-Channel IGBT

文件：78.05 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Package：8-SMD，扁平引线；包装：散装 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 400V 150A 8ECH

ONSEMI

安森美半导体