SILICON CONTROLLED RECTIFIERS

SILICON CONTROLLED RECTIFIERS ● 2 A Continuous On-State Current ● 15 A Surge-Current ● Glass Passivated Wafer ● 400 V to 600 V Off-State Voltage ● Max IGT of 200 µA ● Package Options

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DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium−Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features •High DC Current Gain −hFE = 2500 (Typ) @ IC= 4.0 Adc •Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus)= 60 Vdc (Min) −

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ONSEMI

安森美半导体

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60– 80– 100 VOLTS 80 WATTS . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —hFE= 2500 (Typ) @ IC= 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc

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Motorola

摩托罗拉

PNP SILICON POWER DARLINGTONS

● Designed for Complementary Use with TIP100, TIP101 and TIP102 ● 80 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Maximum VCE(sat) of 2.5 V at IC = 8 A

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