丝印：TH8003STL；Package：POWERDI1012-8；80V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Rated to +175°C – Ideal for High Ambient Temperature Environments  100 Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application  High Conversion Efficiency  Low RDS(ON) – Minimizes On State Losses  Wettable Flank for Improved O

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美台半导体

Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)

文件：499.06 Kbytes 页数：7 Pages

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notebook PC Applications Portable Equipment Applications

文件：238.72 Kbytes 页数：7 Pages

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII)

High Efficiency DC／ DC Converter Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to a small and thin package • High speed switching • Small gate charge: QSW = 7.5 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 130 mΩ (typ.) • High forward

文件：248.62 Kbytes 页数：7 Pages

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