TGF2965-SM中文资料0.03 - 3 GHz, 5 Watt, 32 V, 50 Ohm GaN RF Input-Matched Transistor数据手册Qorvo规格书

描述 Description

Qorvo's TGF2965-SM is a 6W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 0.03 to 3.0 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band.
The device is housed in an industry-standard 3 x 3 mm surface mount QFN package.
Lead-free and ROHS compliant.
Evaluation boards are available upon request.
For additional information on GaN thermal performance refer to the following application note and video.

特性 Features

• Frequency range: 0.03 - 3 GHz
• Output power (P3dB): 6.0W at 2 GHz
• Linear gain: 18 dB typical at 2 GHz
• Typical PAE3dB: 63% at 2 GHz
• Operating voltage: 32V
• Low thermal resistance package
• CW and pulse capable
• 3 x 3 mm package

应用 Application

• Civilian Radar
• Jammers
• Land Mobile Radio Communications
• Military Communications
• Military Radar
• Test Instrumentation
• Wideband and Narrowband Amplifiers