5W, 32V, 0.03 ??3 GHz, GaN RF Input-Matched Transistor

文件：2.47872 Mbytes 页数：23 Pages

TRIQUINT

5 W, 32 V, 0.03?? GHz, GaN RF Input-Matched Transistor

文件：1.76655 Mbytes 页数：21 Pages

QORVO

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5W, 32V, 0.03 ??3 GHz, GaN RF Input-Matched Transistor

文件：2.47872 Mbytes 页数：23 Pages

TRIQUINT

5 W, 32 V, 0.03?? GHz, GaN RF Input-Matched Transistor

文件：1.76655 Mbytes 页数：21 Pages

QORVO

威讯联合

0.03 - 3 GHz, 5 Watt, 32 V, 50 Ohm GaN RF Input-Matched Transistor

Qorvo's TGF2965-SM is a 6W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 0.03 to 3.0 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the • Frequency range: 0.03 - 3 GHz\n• Output power (P3dB): 6.0W at 2 GHz\n• Linear gain: 18 dB typical at 2 GHz\n• Typical PAE3dB: 63% at 2 GHz\n• Operating voltage: 32V\n• Low thermal resistance package\n• CW and pulse capable\n• 3 x 3 mm package;

Qorvo

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