TGF2952中文资料DC - 14 GHz, 7 Watt Discrete Power GaN on SiC HEMT数据手册Qorvo规格书

描述 Description

Qorvo's TGF2952 is a discrete 1.25 mm GaN on SiC HEMT which operates from DC-14 GHz.
The TGF2952 typically provides 38.4 dBm of saturated output power with power gain of 20.4 dB at 3 GHz. The maximum power added efficiency is 75.7 % which makes the TGF2952 appropriate for high efficiency applications.
Lead-free and RoHS compliant.

特性 Features

• Frequency range: DC - 14 GHz
• 38.4dBm nominal Psat at 3 GHz
• 75.7% maximum PAE at 3 GHz
• 20.4dB nominal power gain at 3GHz
• Bias: Vd = 32V, Idq = 25mA
• Technology: 0.25 um power GaN on SiC
• Chip dimensions: 0.82 x 1.01 x 0.10 mm

应用 Application

• Broadband
• High Efficiency Power Amplifiers
• Marine Radar
• Military Communications
• Point-to-point Communications
• Satellite Communications (Satcom)