TF50N02

Marking：50N02TFXXXYY；Package：TO-252；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description TheTF50N02TO-252usesadvancedtrenchtechnology anddesigntoprovideexcellentRDS(ON)withlowgate charge.Itcanbeusedinawidevarietyofapplications. GeneralFeatures VDSSRDS(ON)@4.5V(typ)ID 20V5.1mΩ50A ●HighdensitycelldesignforultralowRdson ●Fully

TF50N06

Marking：TF50N06；Package：TO-251；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

●GeneralDescription TheTF50N06combinesadvancedtrenchMOSFET technologywithalowresistancepackagetoprovide extremelylowRDS(ON).Thisdeviceisidealforloadswitch andbatteryprotectionapplications. ●Features AdvancehighcelldensityTrenchtechnology LowRDS(ON)tominim

TF521M

TO-220 5A Thyristor

TO-2205AThyristor ■Features ●Repetitivepeakoff-statevoltage:VDRM=200,400,600V ●Averageon-statecurrent:IT(AV)=5A ●Gatetriggercurrent:IGT=15mAmax

TF521S

TO-220F 5A Thyristor

■Features ●Repetitivepeakoff-statevoltage:VDRM=200,400,600V ●Averageon-statecurrent:IT(AV)=5A ●Gatetriggercurrent:IGT=15mAmax ●Isolationvoltage:VISO=1500V(50HzSinewave,RMS) ●ULapprovedtypeavailable

TF525000AG-SP

Single Ended

WirelessRouters ResidentialGateways

TF525000AU-SP

High Out of Band Rejection

WirelessRouters ResidentialGateways

TF541M

TO-220 5A Thyristor

TO-2205AThyristor ■Features ●Repetitivepeakoff-statevoltage:VDRM=200,400,600V ●Averageon-statecurrent:IT(AV)=5A ●Gatetriggercurrent:IGT=15mAmax

TF541S

TO-220F 5A Thyristor

■Features ●Repetitivepeakoff-statevoltage:VDRM=200,400,600V ●Averageon-statecurrent:IT(AV)=5A ●Gatetriggercurrent:IGT=15mAmax ●Isolationvoltage:VISO=1500V(50HzSinewave,RMS) ●ULapprovedtypeavailable

TF541S-A

TO-220F 5A High sensitive Thyristor

■Features ●Repetitivepeakoff-statevoltage:VDRM=400,600V ●Averageon-statecurrent:IT(AV)=5A ●HighsensitiveGatetriggercurrent:IGT=0.2mAmax ●Isolationvoltage:VISO=1500V(50HzSinewave,RMS)

TF561M

TO-220 5A Thyristor

TO-2205AThyristor ■Features ●Repetitivepeakoff-statevoltage:VDRM=200,400,600V ●Averageon-statecurrent:IT(AV)=5A ●Gatetriggercurrent:IGT=15mAmax