TO-220F 5A Thyristor

■Features ●Repetitive peak off-state voltage: VDRM=200, 400, 600V ●Average on-state current: IT(AV)=5A ●Gate trigger current: IGT=15mA max ●Isolation voltage: VISO=1500V(50Hz Sine wave, RMS) ●UL approved type available

文件：49.08 Kbytes 页数：2 Pages

Sanken

三垦

Thyristors

■Features ●Repetitive peak off-state voltage: VDRM=400, 600V ●Average on-state current: IT(AV)=5A ●High sensitive Gate trigger current: IGT=0.2mA max ●Isolation voltage: VISO=1500V(50Hz Sine wave, RMS)

文件：75.2 Kbytes 页数：3 Pages

Sanken

三垦

TO-220F 5A High sensitive Thyristor

■Features ●Repetitive peak off-state voltage: VDRM=400, 600V ●Average on-state current: IT(AV)=5A ●High sensitive Gate trigger current: IGT=0.2mA max ●Isolation voltage: VISO=1500V(50Hz Sine wave, RMS)

文件：30.47 Kbytes 页数：1 Pages

Sanken

三垦

Single Ended

 Wireless Routers  Residential Gateways

文件：1.19425 Mbytes 页数：3 Pages

Transko

High Out of Band Rejection

 Wireless Routers  Residential Gateways

文件：1.40993 Mbytes 页数：4 Pages

Transko

N -CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The TF5N10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 100V ID =5A RDS(ON ty

文件：3.31472 Mbytes 页数：5 Pages

TUOFENG

拓锋半导体

TF Series Fast tr High Performance 20 Section 10-Tap 28-Pin Delay Lines

文件：32.85 Kbytes 页数：1 Pages

RHOMBUS-IND

TF Series High Performance 20 Section 10-Tap Delay Lines / SP3 Series

文件：38.41 Kbytes 页数：1 Pages

RHOMBUS-IND

TF Series Fast tr High Performance 20 Section 10-Tap 28-Pin Delay Lines

文件：32.85 Kbytes 页数：1 Pages

RHOMBUS-IND

TF Series High Performance 20 Section 10-Tap Delay Lines / SP3 Series

文件：38.41 Kbytes 页数：1 Pages

RHOMBUS-IND