N -CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The TF5N10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 100V ID =5A RDS(ON ty

文件：3.31472 Mbytes 页数：5 Pages

TUOFENG

拓锋半导体

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 100V RDSON (MAX.) 150mΩ ID 10A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

文件：231.29 Kbytes 页数：6 Pages

EXCELLIANCE

杰力科技

N-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：428.73 Kbytes 页数：6 Pages

EXCELLIANCE

杰力科技

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 100V RDSON (MAX.) 150mΩ ID 10A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

文件：229.83 Kbytes 页数：5 Pages

EXCELLIANCE

杰力科技