TF205

2.0A Fast Recovery Rectifier

Features •Lowforwardvoltagedropat2A •Highcurrentcapability •Highreliability •Highforwardsurgecurrentcapability •Hightemperaturesolderingguaranteed:250°C/10seconds/.0375(9.5mm)leadlength,5lbs(2.3kg)tension •RoHSCompliance

TF206

2.0A Fast Recovery Rectifier

Features •Lowforwardvoltagedropat2A •Highcurrentcapability •Highreliability •Highforwardsurgecurrentcapability •Hightemperaturesolderingguaranteed:250°C/10seconds/.0375(9.5mm)leadlength,5lbs(2.3kg)tension •RoHSCompliance

TF207

2.0A Fast Recovery Rectifier

Features •Lowforwardvoltagedropat2A •Highcurrentcapability •Highreliability •Highforwardsurgecurrentcapability •Hightemperaturesolderingguaranteed:250°C/10seconds/.0375(9.5mm)leadlength,5lbs(2.3kg)tension •RoHSCompliance

TF207N

N-Channel 20-V(D-S)

FEATURE zTrenchFETPowerMOSFET zExcellentRDS(on) zLowGateCharge zHighPowerandCurrentHandingCapability zSurfaceMountPackage APPLICATION zLoadSwitch zPowerManagement

TF207P

P-Channel -20V(D-S) MOSFET

FEATURE zTrenchFETPowerMOSFET zExcellentRDS(on) zLowGateCharge zHighPowerandCurrentHandingCapability zSurfaceMountPackage APPLICATION zLoadSwitch zPowerManagement

TF208N

N-Channel 20-V(D-S) MOSFET

FEATURE zTrenchFETPowerMOSFET zExcellentRDS(on) zLowGateCharge zHighPowerandCurrentHandingCapability zSurfaceMountPackage APPLICATION zLoadSwitch zPowerManagement

TF20N02

Marking：20N02；Package：TO-251；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

●GeneralDescription TheTF20N02combinesadvancedtrench MOSFETtechnologywithalowresistancepackagetoprovideextremelylowRDS(ON).Thisdeviceisidealforloadswitchandbatteryprotectionapplications. ●Features AdvancehighcelldensityTrenchtechnology LowRDS(ON)tominimize

TF20N03

Marking：20N03TFYWCP；Package：TO-252；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description TheTF20N03TO-252usesadvancedtrenchtechnology anddesigntoprovideexcellentRDS(ON)withlowgate charge.Itcanbeusedinawidevarietyofapplications. GeneralFeatures ●HighdensitycelldesignforultralowRdson ●Fullycharacterizedavalanchevoltageandcurrent

TF20N06

Marking：20N06TFYWCP；Package：TO-252；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GeneralFeatures ●VDS=60V,ID=20A RDS(ON)

TF20NP03N

N P-CHANNEL ENHANCEMENT MODE POWER MOSFET

GeneralDescription TheTF20NP03Ncombinesadvancedtrench MOSFETtechnologywithalowresistancepackage toprovideextremelylowRDS(ON).ItcombinesoneN ChannelMOSFETandonePchannelMOSFET. Features AdvancehighcelldensityTrenchtechnology LowRDS(ON)tominimizeconductive