2.0A Fast Recovery Rectifier

Features • Low forward voltage drop at 2A • High current capability • High reliability • High forward surge current capability • High temperature soldering guaranteed: 250°C/10 seconds /.0375 (9.5mm) lead length, 5lbs (2.3kg) tension • RoHS Compliance

文件：127.99 Kbytes 页数：4 Pages

TAITRON

2.0A Fast Recovery Rectifier

Features • Low forward voltage drop at 2A • High current capability • High reliability • High forward surge current capability • High temperature soldering guaranteed: 250°C/10 seconds /.0375 (9.5mm) lead length, 5lbs (2.3kg) tension • RoHS Compliance

文件：127.99 Kbytes 页数：4 Pages

TAITRON

2.0A Fast Recovery Rectifier

Features • Low forward voltage drop at 2A • High current capability • High reliability • High forward surge current capability • High temperature soldering guaranteed: 250°C/10 seconds /.0375 (9.5mm) lead length, 5lbs (2.3kg) tension • RoHS Compliance

文件：127.99 Kbytes 页数：4 Pages

TAITRON

N-Channel 20-V(D-S)

FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability z Surface Mount Package APPLICATION z Load Switch z Power Management

文件：2.97374 Mbytes 页数：5 Pages

TUOFENG

拓锋半导体

P-Channel -20V(D-S) MOSFET

FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability z Surface Mount Package APPLICATION z Load Switch z Power Management

文件：3.974 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体

N-Channel 20-V(D-S) MOSFET

FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability z Surface Mount Package APPLICATION z Load Switch z Power Management

文件：3.70761 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体

丝印：20N02；Package：TO-251；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The T F20N02combines advanced trench MOSFET technology with a low resistance package to provideextremely low RDS(ON) .This device is ideal for load switchand battery protection applications. ● Features Advance high cell densityTrench technology Low RDS(ON) to minimize

文件：3.76703 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体

丝印：20N03TFYWCP；Package：TO-252；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The TF20N03 TO-252 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current

文件：4.38125 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体

丝印：20N06TFYWCP；Package：TO-252；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Features ● VDS =60V,ID =20A RDS(ON)

文件：3.83297 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体

N P-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description The TF20NP03N combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). It combines one N Channel MOSFET and one P channel MOSFET. Features Advance high cell density Trench technology Low RDS(ON) to minimize conductive

文件：1.9289 Mbytes 页数：8 Pages

TUOFENG

拓锋半导体