TF030N03N芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
TF030N03N	文件：3.41313 Mbytes Page：6 Pages	丝印：TF030N03N；Package：PDFWB5X6-8L；N-CHANNEL ENHANCEMENT MODE POWER MOSFET ● General Description The TF030N03N uses advanced trench technology and design to provide excellent RDS(ON) withlowgate charge. It can be used in a wide variety ofapplications. ● Features Advance device constructure Low RDS(ON) to minimize conduction loss Low Gate Charge for fast switching 文件：3.41313 Mbytes 页数：6 Pages	TUOFENG 拓锋半导体	TUOFENG
TF030N03N	文件：3.41313 Mbytes Page：6 Pages	丝印：TF030N03N；Package：PDFWB5X6-8L；N-CHANNEL ENHANCEMENT MODE POWER MOSFET ● General Description The TF030N03N uses advanced trench technology and design to provide excellent RDS(ON) withlowgate charge. It can be used in a wide variety ofapplications. ● Features Advance device constructure Low RDS(ON) to minimize conduction loss Low Gate Charge for fast switching 文件：3.41313 Mbytes 页数：6 Pages	TUOFENG 拓锋半导体	TUOFENG

更多TF030N03N供应商更新时间2025-9-21 11:06:00