TF20P02芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
TF20P02	文件：2.11233 Mbytes Page：5 Pages	丝印：TF20P02；Package：TO-251；P -CHANNEL ENHANCEMENT MODE POWER MOSFET ● General Description The TF20P02 combines advanced trench MOSFET technology with a low resistance package toprovide extremely low RDS(ON) . ● Features Advance high cell density Trench technology Low RDS(ON) to minimize conductive loss Low Gate Charge for fast switching Low Thermal resist 文件：2.11233 Mbytes 页数：5 Pages	TUOFENG 拓锋半导体	TUOFENG
TF20P02	文件：2.11233 Mbytes Page：5 Pages	丝印：TF20P02；Package：TO-251；P -CHANNEL ENHANCEMENT MODE POWER MOSFET ● General Description The TF20P02 combines advanced trench MOSFET technology with a low resistance package toprovide extremely low RDS(ON) . ● Features Advance high cell density Trench technology Low RDS(ON) to minimize conductive loss Low Gate Charge for fast switching Low Thermal resist 文件：2.11233 Mbytes 页数：5 Pages	TUOFENG 拓锋半导体	TUOFENG

更多TF20P02供应商更新时间2025-9-6 11:06:00