ZUMT618

Super323
SOT323PNPSILICONPOWER(SWITCHING)TRANSISTOR3APeakPulseCurrent

Features •BVCEO>-20V •IC=-1AContinuousCollectorCurrent •ICM=-3APeakPulseCurrent •LowSaturationVoltage-250mVMax@IC=-1A. •RCE(SAT)=200mΩ@1AforaLowEquivalentOn-Resistance •500mWPowerDissipation •ExcellenthFECharacteristicsupto3A •ComplementaryNPNT

ZXTD618MC

DUAL20VNPNLOWSATURATIONSWITCHINGTRANSISTOR

FeaturesandBenefits •BVCEO>20V •IC=4.5AContinuousCollectorCurrent •LowSaturationVoltage(150mV@1A) •RSAT=47mΩforaLowEquivalentOn-Resistance •hFEspecifiedupto6Aforhighcurrentgainholdup •DualNPNsavingfootprintandcomponentcount •Lowprofile0.8mmhigh

ZXTD618MCTA

DUAL20VNPNLOWSATURATIONSWITCHINGTRANSISTOR

FeaturesandBenefits •BVCEO>20V •IC=4.5AContinuousCollectorCurrent •LowSaturationVoltage(150mV@1A) •RSAT=47mΩforaLowEquivalentOn-Resistance •hFEspecifiedupto6Aforhighcurrentgainholdup •DualNPNsavingfootprintandcomponentcount •Lowprofile0.8mmhigh

ZXTN618MA

20VNPNLOWSATURATIONTRANSISTOR

FeaturesandBenefits •BVCEO>20V •IC=4.5AContinuousCollectorCurrent •LowSaturationVoltage(150mVmax@1A) •RSAT=47mΩforalowequivalentOn-Resistance •hFEspecifiedupto6Aforhighcurrentgainholdup •Lowprofile0.6mmhighpackageforthinapplications •RθJAeffic

ZXTN618MATA

20VNPNLOWSATURATIONTRANSISTOR

FeaturesandBenefits •BVCEO>20V •IC=4.5AContinuousCollectorCurrent •LowSaturationVoltage(150mVmax@1A) •RSAT=47mΩforalowequivalentOn-Resistance •hFEspecifiedupto6Aforhighcurrentgainholdup •Lowprofile0.6mmhighpackageforthinapplications •RθJAeffic

ZXTNS618MC

20VNPNLOWSATURATIONTRANSISTORAND40V,1ASCHOTTKYDIODECOMBINATIONDUAL

FeaturesandBenefits NPNTransistor •BVCEO>20V •IC=4.5AContinuousCollectorCurrent •LowSaturationVoltage(150mVmax@1A) •RSAT=47mΩforalowequivalentOn-Resistance •hFEcharacterizedupto6Aforhighcurrentgainholdup SchottkyDiode •BVR>40V

ZXTNS618MCTA

20VNPNLOWSATURATIONTRANSISTORAND40V,1ASCHOTTKYDIODECOMBINATIONDUAL

FeaturesandBenefits NPNTransistor •BVCEO>20V •IC=4.5AContinuousCollectorCurrent •LowSaturationVoltage(150mVmax@1A) •RSAT=47mΩforalowequivalentOn-Resistance •hFEcharacterizedupto6Aforhighcurrentgainholdup SchottkyDiode •BVR>40V