ZXTNS618MCTA分立半导体产品的晶体管-双极性晶体管（BJT）-单个规格书PDF中文资料

Features and Benefits

NPN Transistor

• BVCEO > 20V

• IC = 4.5A Continuous Collector Current

• Low Saturation Voltage (150mV max @ 1A)

• RSAT = 47mΩ for a low equivalent On-Resistance

• hFE characterized up to 6A for high current gain hold up

Schottky Diode

• BVR > 40V

• IFAV = 3A Average Peak Forward Current

• Low VF < 500mV (@1A) for reduced power loss

• Fast switching due to Schottky barrier

Low profile 0.8mm high package for thin applications

RθJA efficient, 40 lower than SOT26

6mm2 footprint, 50 smaller than TSOP6 and SOT26

Lead-Free, RoHS Compliant (Note 1)

Halogen and Antimony Free. “Green” Device (Note 2)

Qualified to AEC-Q101 Standards for High Reliability

Applications

• DC – DC Converters

• Charging circuits

• Mobile phones

• Motor control

• Portable applications