BZX84-C39

Marking：T8；Package：SOT23；Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX84-A),±2(BZX84-B)and approximately±5(BZX84-C)tolerancerange.Theseriesincludes37breakdownvolt

BZX84-C39-Q

Marking：T8；Package：TO-236AB；Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX84-A),±2(BZX84-B)and approximately±5(BZX84-C)tolerancerange.Theseriesincludes37breakdownvolt

MM5Z16

Marking：T8；Package：SOD-545；Zener Diode

Features ●Highreliability ●ZenerVoltage2.0V~75V

MM5Z4V3ST1G

Marking：T8；Package：SOD-523；Zener Voltage Regulators 500 mW SOD-523, Tight Tolerance Series

ThisseriesofZenerdiodesispackagedinaSOD−523surface mountpackage.Theyaredesignedtoprovidevoltageregulation protectionandareespeciallyattractiveinsituationswherespaceisata premium.Theyarewellsuitedforapplicationssuchascellular phones,handheldportables,an

PESD3V3U1UB

Marking：T8；Package：SC-79；Ultra low capacitance unidirectional ESD protection diodes

1.Generaldescription LowcapacitanceunidirectionalElectroStaticDischarge(ESD)protectiondiodeinanultrasmalland flatleadSOD523(SC-79)Surface-MountedDevice(SMD)plasticpackagesdesignedtoprotect onesignallinefromthedamagecausedbyESDandothertransients. 2.Feature

PESD3V3U1UB

Marking：T8；Package：SOD523；Ultra low capacitance unidirectional ESD protection diodes

1.1Generaldescription UltralowcapacitanceunidirectionalElectroStaticDischarge(ESD)protectiondiodesin smallSurface-MountedDevice(SMD)plasticpackagesdesignedtoprotectonesignal linefromthedamagecausedbyESDandothertransients. 1.2Features 1.3Applications Table1.P

PMN25EN

Marking：T8；Package：SOT457；30 V, 6.2 A N-channel Trench MOSFET

1.1Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT457(SC-74) smallSurface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 1.2Featuresandbenefits Logiclevelcompatible Veryfastswitching TrenchMOSFETtechnology 1

PUMD24

Marking：T8；Package：TSSOP6；50 V, 20 mA NPN/PNP resistor-equipped double transistor; R1 = 100 kΩ, R2 = 100 kΩ

1.Generaldescription NPN/PNPdoubleResistor-EquippedTransistor(RET)inaverysmallSOT363(SC-88)Surface- MountedDevice(SMD)plasticpackage. PNP/PNPcomplement:PUMB24 NPN/NPNcomplement:PUMH24 2.Featuresandbenefits •Built-inbiasresistors •Simplifiescircuitdesign •Re

PZU5.1DB2

Marking：T8；Package：SOT353；Dual Zener diodes

1.1Generaldescription Dualisolatedgeneral-purposeZenerdiodesinSOT353(SC-88A)verysmall Surface-MountedDevice(SMD)standardplasticanddark-greenplasticpackages. 1.2Features 1.3Applications nGeneralregulationfunctions nNon-repetitivepeakreversepower dissipation:PZSM

SST4118

Marking：T8；Package：SOT-23；N-Channel JFETs

DESCRIPTION The2N/PN/SST4117Aseriesofn-channelJFETsprovideultra-highinputimpedance.Thesedevicesarespecifiedwitha1-pAlimitandtypicallyoperateat0.2pA.Thismakesthemperfectchoicesforuseashigh-impedancesensitivefront-endamplifiers. FEATURES ●Ultra-LowLeakag