丝印：T835T-8G；Package：D2PAK；8 A 800 V D2PAK Snubberless™ Triac

Features • High static dV/dt • High dynamic turn-off commutation (dl/dt)c • 150 °C maximum junction temperature • Three quadrants • Surge capability VDSM, VRSM = 900 V • Benefits: – High immunity to false turn-on thanks to high static dV/dt – Better turn-off in high temperature environment

文件：232.87 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

丝印：T835T-8G；Package：D2PAK；8 A 800 V D2PAK Snubberless™ Triac

Features • High static dV/dt • High dynamic turn-off commutation (dl/dt)c • 150 °C maximum junction temperature • Three quadrants • Surge capability VDSM, VRSM = 900 V • Benefits: – High immunity to false turn-on thanks to high static dV/dt – Better turn-off in high temperature environment

文件：232.87 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

丝印：T835T-8G；Package：D2PAK；8 A 800 V D2PAK Snubberless™ Triac

Features • High static dV/dt • High dynamic turn-off commutation (dl/dt)c • 150 °C maximum junction temperature • Three quadrants • Surge capability VDSM, VRSM = 900 V • Benefits: – High immunity to false turn-on thanks to high static dV/dt – Better turn-off in high temperature environment

文件：232.87 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

丝印：T835T-8G；Package：D2PAK；8 A 800 V D2PAK Snubberless™ Triac

Features • High static dV/dt • High dynamic turn-off commutation (dl/dt)c • 150 °C maximum junction temperature • Three quadrants • Surge capability VDSM, VRSM = 900 V • Benefits: – High immunity to false turn-on thanks to high static dV/dt – Better turn-off in high temperature environment

文件：232.87 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体