BZX384-C3V9分立半导体产品的二极管-齐纳-单规格书PDF中文资料

BZX384-C3V9属于分立半导体产品的二极管-齐纳-单。由安世半导体(中国)有限公司制造生产的BZX384-C3V9二极管 - 齐纳 - 单齐纳二极管可用于以反向击穿模式工作，并根据以这种方式使用时的行为来分类。这些器件可用作电压基准或限压用途，还可以用作类似于整流二极管的单向电流阀，但它们在这种模式下的性能通常不如专用器件理想。该系列产品的每个器件封装恰好实现该功能的一个实例。

1. General description

Low-power voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD)

plastic package.

The diodes are available in the normalized E24 ±1 (BZX384-A), ±2 (BZX384-B) and

approximately ±5 (BZX384-C) tolerance range. The series includes 37 breakdown voltages with

nominal working voltages from 2.4 V to 75 V.

2. Features and benefits

• Total power dissipation: ≤300 mW

• Three tolerance series: ±1 , ±2 and approximately ±5

• Working voltage range: nominal 2.4 V to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: ≤ 40 W

3. Applications

• General regulation functions