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BSR16

丝印:T8-;Package:SOT-23;PNP switching transistors

DESCRIPTION PNP switching transistor in a SOT23 plastic package. NPN complements: BSR13 and BSR14. FEATURES • High current (max. 600 mA) • Low voltage (max. 60 V). APPLICATIONS • Medium power switching.

文件:139 Kbytes 页数:8 Pages

恩XP

恩XP

BSR16

丝印:T8-;Package:SOT-23;PNP switching transistors

DESCRIPTION PNP switching transistor in a SOT23 plastic package. NPN complements: BSR13 and BSR14. FEATURES • High current (max. 600 mA) • Low voltage (max. 60 V). APPLICATIONS • Medium power switching.

文件:45.83 Kbytes 页数:8 Pages

PHI

飞利浦

PHI

T810-600B

丝印:T8-1060;Package:DPAK;Snubberless™, logic level and standard 8 A Triacs

Features • On-state rms current, IT(RMS) 8 A • Repetitive peak off-state voltage, VDRM / VRRM 600 V to 800 V • Triggering gate current, IGT 5 to 50 mA Description Available either in through-hole and surface-mount packages, these devices are suitable for general purpose AC switching. They

文件:274.24 Kbytes 页数:21 Pages

STMICROELECTRONICS

意法半导体

T810-600B-TR

丝印:T8-1060;Package:DPAK;Snubberless™, logic level and standard 8 A Triacs

Features • On-state rms current, IT(RMS) 8 A • Repetitive peak off-state voltage, VDRM / VRRM 600 V to 800 V • Triggering gate current, IGT 5 to 50 mA Description Available either in through-hole and surface-mount packages, these devices are suitable for general purpose AC switching. They

文件:274.24 Kbytes 页数:21 Pages

STMICROELECTRONICS

意法半导体

T810-800B-TR

丝印:T8-1080;Package:DPAK;Snubberless™, logic level and standard 8 A Triacs

Features • On-state rms current, IT(RMS) 8 A • Repetitive peak off-state voltage, VDRM / VRRM 600 V to 800 V • Triggering gate current, IGT 5 to 50 mA Description Available either in through-hole and surface-mount packages, these devices are suitable for general purpose AC switching. They

文件:274.24 Kbytes 页数:21 Pages

STMICROELECTRONICS

意法半导体

T835-600B

丝印:T8-3560;Package:DPAK;Snubberless™, logic level and standard 8 A Triacs

Features • On-state rms current, IT(RMS) 8 A • Repetitive peak off-state voltage, VDRM / VRRM 600 V to 800 V • Triggering gate current, IGT 5 to 50 mA Description Available either in through-hole and surface-mount packages, these devices are suitable for general purpose AC switching. They

文件:274.24 Kbytes 页数:21 Pages

STMICROELECTRONICS

意法半导体

T835-600B-TR

丝印:T8-3560;Package:DPAK;Snubberless™, logic level and standard 8 A Triacs

Features • On-state rms current, IT(RMS) 8 A • Repetitive peak off-state voltage, VDRM / VRRM 600 V to 800 V • Triggering gate current, IGT 5 to 50 mA Description Available either in through-hole and surface-mount packages, these devices are suitable for general purpose AC switching. They

文件:274.24 Kbytes 页数:21 Pages

STMICROELECTRONICS

意法半导体

T835-600H

丝印:T8-3560;Package:IPAK;Snubberless™, logic level and standard 8 A Triacs

Features • On-state rms current, IT(RMS) 8 A • Repetitive peak off-state voltage, VDRM / VRRM 600 V to 800 V • Triggering gate current, IGT 5 to 50 mA Description Available either in through-hole and surface-mount packages, these devices are suitable for general purpose AC switching. They

文件:274.24 Kbytes 页数:21 Pages

STMICROELECTRONICS

意法半导体

T835-800B

丝印:T8-3580;Package:DPAK;Snubberless™, logic level and standard 8 A Triacs

Features • On-state rms current, IT(RMS) 8 A • Repetitive peak off-state voltage, VDRM / VRRM 600 V to 800 V • Triggering gate current, IGT 5 to 50 mA Description Available either in through-hole and surface-mount packages, these devices are suitable for general purpose AC switching. They

文件:274.24 Kbytes 页数:21 Pages

STMICROELECTRONICS

意法半导体

T835-800B-TR

丝印:T8-3580;Package:DPAK;Snubberless™, logic level and standard 8 A Triacs

Features • On-state rms current, IT(RMS) 8 A • Repetitive peak off-state voltage, VDRM / VRRM 600 V to 800 V • Triggering gate current, IGT 5 to 50 mA Description Available either in through-hole and surface-mount packages, these devices are suitable for general purpose AC switching. They

文件:274.24 Kbytes 页数:21 Pages

STMICROELECTRONICS

意法半导体

详细参数

  • 型号:

    T8-

  • 功能描述:

    两极晶体管 - BJT PNP Transistor General Purpose

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    PNP 集电极—基极电压

  • VCBO:

    集电极—发射极最大电压

  • VCEO:

    - 40 V 发射极 - 基极电压

  • VEBO:

    - 6 V

  • 增益带宽产品fT:

    直流集电极/Base Gain hfe

  • Min:

    100 A

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    PowerFLAT 2 x 2

供应商型号品牌批号封装库存备注价格
NEXPERIA/安世
25+
SOT23
600000
NEXPERIA/安世全新特价BSR16即刻询购立享优惠#长期有排单订
询价
FSC
15+
原厂原装
90000
进口原装现货假一赔十
询价
FAIRCHILD
24+
SOT-23
8900
全新原装现货,假一罚十
询价
NEXPERIA/安世
20+
SOT-23
120000
原装正品 可含税交易
询价
NEXPERIA/安世
24+
SOT23
503345
免费送样原盒原包现货一手渠道联系
询价
PHI
25+
SOT23
6500
十七年专营原装现货一手货源,样品免费送
询价
FAIRCHILDONSEMICONDUCTOR
21+
NA
159000
只做原装,假一罚十
询价
Fairchild(飞兆/仙童)
24+
N/A
11938
原厂可订货,技术支持,直接渠道。可签保供合同
询价
NK/南科功率
2025+
SOT-23
10000
国产南科平替供应大量
询价
FAIRCHILD/FSC/仙童飞兆半
24+
SOT-23
58150
新进库存/原装
询价
更多T8-供应商 更新时间2025-9-21 14:14:00