N-channel Enhanced mode DFN5*6/TO-251/TO-252/TO-220 MOSFET

文件：714.28 Kbytes 页数：7 Pages

SEMIPOWER

芯派科技

丝印：DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

文件：322.58 Kbytes 页数：2 Pages

ISC

无锡固电

Quad SPST JFET Analog Switch

ADI

亚德诺

丝印：SW068R08ET；Package：TO-263；N-channel Enhanced mode TO-220/TO-263 MOSFET

Features  High ruggedness  Low RDS(ON)(Typ 7.1mΩ)@VGS=10V  Low Gate Charge (Typ59nC)  Improved dv/dt Capability  100 Avalanche Tested  Application: Synchronous Rectification,Li Battery Protect Board, Inverter General Description This power MOSFET is produced with advanced tec

文件：859.71 Kbytes 页数：6 Pages

SEMIPOWER

芯派科技

丝印：SW065R68E7T；Package：TO-252；N-channel Enhanced mode TO-252 MOSFET

Features  High ruggedness  Low RDS(ON) (Typ 6.3mΩ)@VGS=10V  Low Gate Charge (Typ 75nC)  Improved dv/dt Capability  100 Avalanche Tested  Application:Synchronous Rectification, Li Battery Protect Board, Inverter General Description This power MOSFET is produced with advanced technol

文件：689.14 Kbytes 页数：6 Pages

SEMIPOWER

芯派科技

丝印：SW068R08ET；Package：TO-220；N-channel Enhanced mode TO-220/TO-263 MOSFET

Features  High ruggedness  Low RDS(ON)(Typ 7.1mΩ)@VGS=10V  Low Gate Charge (Typ59nC)  Improved dv/dt Capability  100 Avalanche Tested  Application: Synchronous Rectification,Li Battery Protect Board, Inverter General Description This power MOSFET is produced with advanced tec

文件：859.71 Kbytes 页数：6 Pages

SEMIPOWER

芯派科技

Wire Wound Chip Inductors

• 1. Tolerance : G = ±2% , J = ±5% , K = ±10%,2. L ,Q , SRF : Agilent/HP E4991A+Agilent/HP16197A,    (The electrical specification test by the smallest gap position) or HP16193A,3. Rdc : DIGITAL MILLIOHM METER Chroma 16502, or equivalent.,4. lrms for a 15℃ rise above 25℃ ambient.,5. Oper;

TECSTAR

年程科技

Wire Wound Chip Inductors

• 1. Tolerance : G = ±2% , J = ±5% , K = ±10%,2. L ,Q , SRF : Agilent/HP E4991A+Agilent/HP16197A,    (The electrical specification test by the smallest gap position) or HP16193A,3. Rdc : DIGITAL MILLIOHM METER Chroma 16502, or equivalent.,4. lrms for a 15℃ rise above 25℃ ambient.,5. Oper;

TECSTAR

年程科技