首页 >SVF7N65RFJH>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SVF7N65RFJH | 丝印：7N65RFJH；Package：TO-220FJH-3L；7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, 文件：382.47 Kbytes 页数：10 Pages | SILAN 士兰微 | SILAN | |
SVF7N65RFJH | 丝印：7N65RFJH；Package：TO-220FJH-3L；7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, 文件：373.55 Kbytes 页数：10 Pages | SILAN 士兰微 | SILAN | |
SVF7N65RFJH | 丝印：7N65RFJH；Package：TO-220FJH-3L；7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, 文件：382.47 Kbytes 页数：10 Pages | SILAN 士兰微 | SILAN | |
SVF7N65RFJH | 丝印：7N65RFJH；Package：TO-220FJH-3L；7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, 文件：382.46 Kbytes 页数：10 Pages | SILAN 士兰微 | SILAN | |
SVF7N65RFJH | 丝印：7N65RFJH；Package：TO-220FJH-3L；7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, 文件：382.46 Kbytes 页数：10 Pages | SILAN 士兰微 | SILAN | |
SVF7N65RFJH | 丝印：7N65RFJH；Package：TO-220FJH-3L；7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, 文件：382.46 Kbytes 页数：10 Pages | SILAN 士兰微 | SILAN | |
SVF7N65RFJH | 丝印：7N65RFJH；Package：TO-220FJH-3L；7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, 文件：373.56 Kbytes 页数：10 Pages | SILAN 士兰微 | SILAN | |
SVF7N65RFJH | 丝印：7N65RFJH；Package：TO-220FJH-3L；7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, 文件：373.55 Kbytes 页数：10 Pages | SILAN 士兰微 | SILAN |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SILAN/士兰微 |
24+ |
TO220F |
12000 |
专营SILAN士兰微原装保障 |
询价 | ||
士兰微 |
24+ |
10000 |
原装现货 |
询价 | |||
SILAN/士兰微 |
2022+ |
TO-263 |
50000 |
原厂代理 终端免费提供样品 |
询价 | ||
SILAN/士兰微 |
2022+ |
TO-263 |
30000 |
进口原装现货供应,绝对原装 假一罚十 |
询价 | ||
SILAN/士兰微 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
SILAN |
24+ |
DIPSOP |
33520 |
一级代理/放心购买 |
询价 | ||
SILAN/士兰微 |
25+ |
90000 |
全新原装现货 |
询价 | |||
SILAN/士兰微 |
25+ |
45000 |
本公司 只做全新原装正品 |
询价 | |||
SILAN |
25+ |
SOP |
4100 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
SILAN |
1716+ |
TO-22OF |
7500 |
只做原装进口,假一罚十 |
询价 |
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