SVF7N65RFJH中文资料士兰微数据手册PDF规格书

GENERAL DESCRIPTION

SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode

power MOS field effect transistor which is produced using Silan

proprietary F-CellTM structure VDMOS technology. The improved

process and cell structure have been especially tailored to minimize

on-state resistance, provide superior switching performance, and

withstand high energy pulse in the avalanche and commutation

mode.

These devices are widely used in AC-DC power supplies, DC-DC

converters and H-bridge PWM motor drivers.

FEATURES

 7A, 650V, RDS(on)(typ.)=1.2@VGS=10V

 Low gate charge

 Low Crss

 Fast switching

 Improved dv/dt capability