丝印：SVF8N80T；Package：TO-220-3L；8A, 800V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF8N80T/F/K is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-

文件：278.31 Kbytes 页数：10 Pages

SILAN

士兰微

丝印：SVF8N80T；Package：TO-220-3L；8A, 800V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF8N80T/F/K is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-

文件：278.31 Kbytes 页数：10 Pages

SILAN

士兰微

丝印：SVF8N80T；Package：TO-220-3L；8A, 800V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF8N80T/F/K is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-

文件：278.31 Kbytes 页数：10 Pages

SILAN

士兰微

平面高压MOS功率管

SVF8N80T/F/K N沟道增强型高压功率MOS场效应晶体管采用士兰微电子F-CellTM平面高压VDMOS 工艺技术制造。先进的工艺及条状的原胞设计结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。\n\n 该产品可广泛应用于AC-DC开关电源，DC-DC电源转换器，高压H桥PWM马达驱动。 • 8A，800V，RDS(on)(典型值)=1.42Ω@VGS=10V\n• 低栅极电荷量\n• 低反向传输电容\n• 开关速度快 \n• 提升了dv/dt 能力;

Silan

士兰微