60A,100V Heatsink Trench N-Channel Power MOSFET

文件：1.21645 Mbytes 页数：7 Pages

THINKISEMI

思祁半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 60A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 16mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：333.24 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 60A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 18.3mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：333.58 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 100-V (D-S) 175 Degree Celcious MOSFET

文件：41.33 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

N-Channel MOSFET uses advanced trench technology

文件：1.51894 Mbytes 页数：5 Pages

DOINGTER

杜因特

N-Channel 100-V (D-S) 175C MOSFET

文件：53.86 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世

N-Channel 100-V (D-S) MOSFET

文件：115.09 Kbytes 页数：7 Pages

VishayVishay Siliconix

威世

N-Channel 100-V (D-S) 175C MOSFET

Vishay

威世

N-Channel 100-V (D-S) MOSFET

Vishay

威世