N沟道1500 V、1.6 Ohm典型值、7 A MDmesh K5功率MOSFET，TO-247封装

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. • Industry’s lowest RDS(on) *area \n• Industry’s best figure of merit (FoM) \n• Ultra low gate charge \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

Ultra low gate charge

文件：760.02 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS=1500V(Min) ·Static Drain-Source On-Resistance : RDS(on) =2.0Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

文件：367.96 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International Standard Packages • Molding Epoxies Weet UL 94 V-0 Flammability Classification • Fast Intrinsic Diode • Low Package Inductance Advantages • Easy to Mount • Space Savings •

文件：124.27 Kbytes 页数：4 Pages

IXYS

艾赛斯

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International Standard Packages • Molding Epoxies Weet UL 94 V-0 Flammability Classification • Fast Intrinsic Diode • Low Package Inductance Advantages • Easy to Mount • Space Savings •

文件：124.27 Kbytes 页数：4 Pages

IXYS

艾赛斯