丝印：5K3L；Package：SO-8；P-channel 30 V, 0.048 ??typ., 5 A STripFET??H6 DeepGATE??Power MOSFET in an SO-8 package

Description This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Features • Very low on-resistance RDS(on) • Very low gate charge • High avalanche rugge

文件：538.34 Kbytes 页数：15 Pages

STMICROELECTRONICS

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P - CHANNEL 30V - 0.053ohm - 5A SO-8 STripFET POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema

文件：45.03 Kbytes 页数：6 Pages

STMICROELECTRONICS

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Surface Mount Process Sealed Tactile

文件：264.93 Kbytes 页数：2 Pages

CIT

Surface Mount Process Sealed Tactile

文件：264.93 Kbytes 页数：2 Pages

CIT

NPN SILICON TRANSISTOR

文件：195.66 Kbytes 页数：4 Pages

AUK

NPN Silicon Transistor

文件：204.95 Kbytes 页数：4 Pages

KODENSHI

可天士

NPN Silicon Transistor

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AUK

N-channel 20V - 0.030 ohm- 5A SO-8 2.7V - drive STripFET TM II Power MOSFET

文件：308.04 Kbytes 页数：12 Pages

STMICROELECTRONICS

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N-channel 20V - 0.030 ohm- 5A SO-8 2.7V - drive STripFET TM II Power MOSFET

文件：308.04 Kbytes 页数：12 Pages

STMICROELECTRONICS

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N-channel 60 V, 0.035, 5 A SO-8 STripFET II Power MOSFET

文件：286.81 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体