丝印：ZY；Package：SOD523；1-Line Uni-directional TVS Diode

Features | ® Low operating voltage: 24V | © Ultra low capacitance: SOpF Max © Ultra low leakage: nA level © Low clamping voltage ® 2-pin leadless package © Complies with following standards © -IEC 61000-4-2 (ESD) immunity test ‘Air discharge: £30kV | Contact discharge: £30kV —~ IEC

文件：1.32169 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

NPN Silicon Transistor

Description • General small signal amplifier Features • Low collector saturation voltage : VCE(sat)=0.25V(Max.) • Low output capacitance : Cob=2pF(Typ.) • Complementary pair with STS1980

文件：204.95 Kbytes 页数：4 Pages

KODENSHI

可天士

N - CHANNEL 30V - 0.039ohm - 5A SO-8 STripFETO POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema

文件：70.95 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 20V - 0.030 ohm - 5A SO-8 2.7V-DRIVE STripFET??II POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

文件：255.84 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 20V - 0.030 ohm - 5A SO-8 2.7V-DRIVE STripFET??II POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

文件：255.84 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

丝印：5KK3L；Package：SO-8；Dual P-channel -30 V, 48 mΩ typ., -5 A, STripFET™ H6 Power MOSFET in an SO-8 package

Features  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss Applications  Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The

文件：711.13 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：S5DPF20L；Package：SO-8；P-CHANNEL 20V - 0.045??- 5A SO-8 STripFET??II MOSFET

DESCRIPTION This MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkab

文件：312.34 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 150V - 0.045 OHM - 5A SO-8 LOW GATE CHARGE STripFET??POWER MOSFET

DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency, high-frequency isolated DC-DC converters for Telecom and

文件：114.16 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

N-Channel Super Trench Power MOSFET

Features VDS= 150V, ID= 5.1A RDS(ON)

文件：1.18516 Mbytes 页数：5 Pages

Bychip

百域芯

N - CHANNEL 60V - 0.045ohm - 5A SO-8 STripFET POWER MOSFET

DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

文件：68.66 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体