丝印：5K3L；Package：SO-8；P-channel 30 V, 0.048 ??typ., 5 A STripFET??H6 DeepGATE??Power MOSFET in an SO-8 package

Description This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Features • Very low on-resistance RDS(on) • Very low gate charge • High avalanche rugge

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STMICROELECTRONICS

意法半导体

P沟道30 V、0.048 Ohm典型值、5 A STripFET H6功率MOSFET，SO-8封装

This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. • Very low on-resistance \n• Very low gate charge \n• High avalanche ruggedness \n• Low gate drive power loss;

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意法半导体

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SOP8

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上传：深圳市众芯源半导体有限公司

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SOP8

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上传：深圳市众芯源半导体有限公司

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SOP8

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上传：深圳市励创源科技有限公司