1200 V power Schottky silicon carbide diode

文件：436.58 Kbytes 页数：8 Pages

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丝印：STPSC20H12CWY；Package：TO-247；20 A 1200 V power Schottky silicon carbide diode

Features • AEC-Q101 qualified • No or negligible reverse recovery • Switching behavior independent of temperature • Robust high-voltage periphery • PPAP capable • Operating Tj from -40 °C to 175 °C • ECOPACK2 compliant Applications • OBC (On Board Battery chargers) • PHEV - EV charging s

文件：257.529 Kbytes 页数：10 Pages

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丝印：STPSC20H12D；Package：TO-220AC；1200 V power Schottky silicon carbide diode

文件：436.58 Kbytes 页数：8 Pages

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1200 V、20 A高浪涌碳化硅功率肖特基二极管

该款碳化硅（SiC）二极管可采用TO-220AC, D²PAK 和 TO-247 LL封装，是一款超高性能的功率肖特基二极管，并使用碳化硅基板制造。宽带隙材料可用于设计1200 V额定电压的低VF（正向压降）肖特基二极管。由于肖特基结构的关系，关断时不存在反向恢复现象，且振铃模式几乎可忽略。最小的容性关断行为受温度影响小。\n\n ST碳化硅（SiC）二极管特别适用于PFC和二次侧应用，可在硬开关条件下大幅提升效能。这款二极管将增强目标应用的性能。其高耐正向浪涌电流能力可确保在瞬态期间提供良好的耐受性。 • 无反向恢复，或反向恢复可忽略 \n• 开关行为受温度影响小 \n• 强大的高电压外设 \n• 工作温度从-40 °C 到 175 °C \n• 低VF（正向压降） \n• ECOPACK®2 兼容;

ST

意法半导体

Automotive 1200 V, 20 A, silicon carbide power Schottky diode

Features • AEC-Q101 qualified • No or negligible reverse recovery • Switching behavior independent of temperature • Robust high voltage periphery • PPAP capable • Operating Tj from -40 °C to 175 °C • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. • ECOPACK compliant

文件：467.51 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：SC20H12G2Y；Package：D2PAKHV；Automotive 1200 V, 20 A, silicon carbide power Schottky diode

Features • AEC-Q101 qualified • No or negligible reverse recovery • Switching behavior independent of temperature • Robust high voltage periphery • PPAP capable • Operating Tj from -40 °C to 175 °C • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. • ECOPACK compliant

文件：467.51 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

Automotive 1200 V, 20 A, silicon carbide power Schottky diode

Features • AEC-Q101 qualified • No or negligible reverse recovery • Switching behavior independent of temperature • Robust high voltage periphery • PPAP capable • Operating Tj from -40 °C to 175 °C • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. • ECOPACK compliant

文件：467.51 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

Automotive 1200 V, 20 A, silicon carbide power Schottky diode

Features • AEC-Q101 qualified • No or negligible reverse recovery • Switching behavior independent of temperature • Robust high voltage periphery • PPAP capable • Operating Tj from -40 °C to 175 °C • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. • ECOPACK compliant

文件：467.51 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

Automotive 1200 V, 20 A, silicon carbide power Schottky diode

Features • AEC-Q101 qualified • No or negligible reverse recovery • Switching behavior independent of temperature • Robust high voltage periphery • PPAP capable • Operating Tj from -40 °C to 175 °C • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. • ECOPACK compliant

文件：467.51 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

No or negligible reverse recovery

文件：431.31 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体