丝印：SC20H12G2；Package：D2PAKHV；1200 V, 20 A, silicon carbide power Schottky diode

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STMICROELECTRONICS

意法半导体

Robust high voltage periphery

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STMICROELECTRONICS

意法半导体

20 A 1200 V 碳化硅功率肖特基二极管

The SiC diode, available in TO-247, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.\n\n Due to the Schottky construction, no recovery is • AEC-Q101 qualified \n• No or negligible reverse recovery \n• Switching behavior independent of temperature \n• Robust high-voltage periphery \n• PPAP capable \n• Operating Tj from -40 °C to 175 °C \n• ECOPACK2 compliant;

ST

意法半导体

1200V, 20A, silicon carbide power Schottky Diode

This 20 A, 1200 V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and • No or negligible reverse recovery \n• Switching behavior independent of temperature \n• Robust high voltage periphery \n• Operating Tj from -40 °C to 175 °C \n• Low VF \n• D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. \n• ECOPACK2 compliant;

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意法半导体

Package：TO-247-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：AUTOMOTIVE SIC DIODES

STMICROELECTRONICS

意法半导体

Package：TO-220-2；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 1.2KV 20A TO220AC

STMICROELECTRONICS

意法半导体

Package：TO-220-2；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 1.2KV 20A TO220AC

STMICROELECTRONICS

意法半导体