丝印：STPSC20H12D；Package：TO-220AC；1200 V power Schottky silicon carbide diode

文件：436.58 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

丝印：STPSC20H12D；Package：TO-220AC；1200 V power Schottky silicon carbide diode

文件：436.58 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

Automotive 1200 V, 20 A, silicon carbide power Schottky diode

Features • AEC-Q101 qualified • No or negligible reverse recovery • Switching behavior independent of temperature • Robust high voltage periphery • PPAP capable • Operating Tj from -40 °C to 175 °C • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. • ECOPACK compliant

文件：467.51 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体