Automotive 650 V power Schottky silicon carbide diode

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STMICROELECTRONICS

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650V 10A功率肖特基碳化硅二极管

This 10 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and • Less than 1 mm height package \n• High creepage package \n• No or negligible reverse recovery \n• Temperature independent switching behavior \n• High forward surge capability \n• Very low drop forward voltage \n• Power efficient product \n• ECOPACK2 compliant component;

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650 V, 10 A High Surge Silicon Carbide Power Schottky Diode

This 10 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ri • No or negligible reverse recovery \n• Switching behavior independent of temperature \n• High forward surge capability \n• Operating Tj from -40 °C to 175 °C \n• Power efficient product \n• D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. \n• ECOPACK2 compliant component;

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Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：AUTOMOTIVE 650 V POWER SCHOTTKY

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Package：TO-220-2；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 650V 10A TO220AC

STMICROELECTRONICS

意法半导体

Package：TO-220-2 绝缘，TO-220AC；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 650V 10A TO220AC

STMICROELECTRONICS

意法半导体