650 V, 10 A High Surge Silicon Carbide Power Schottky Diode

This 10 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ri • No or negligible reverse recovery \n• Switching behavior independent of temperature \n• High forward surge capability \n• Operating Tj from -40 °C to 175 °C \n• Power efficient product \n• D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. \n• ECOPACK2 compliant component;

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意法半导体

650 V, 10 A high surge silicon carbide power Schottky diode

Features • No or negligible reverse recovery • Switching behavior independent of temperature • High forward surge capability • Operating Tj from -40 °C to 175 °C • Power efficient product • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. • ECOPACK2 compliant component Descri

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STMICROELECTRONICS

意法半导体

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：650 V, 10 A HIGH SURGE SILICON C

STMICROELECTRONICS

意法半导体

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TO-220

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TO-247

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