Particularly suitable in PFC boost diode function

文件：112.87 Kbytes 页数：8 Pages

STMICROELECTRONICS

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600 V power Schottky silicon carbide diode

碳化硅（SiC）二极管是一款超高性能的功率肖特基二极管，是使用碳化硅基板制造的。宽带隙材料可用于设计600V额定电压的肖特基二极管。由于肖特基结构的关系，关断时不存在反向恢复现象，且振铃模式几乎可忽略。最小的容性关断行为受温度影响小。\n ST碳化硅（SiC）二极管能在硬开关条件下大幅提升PFC操作的性能。 • 无反向恢复，或反向恢复可忽略\n• 开关行为受温度影响小• 特别适用于PFC升压二极管功能;

ST

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650 V, 10 A low VF power Schottky silicon carbide diode

Features • No or negligible reverse recovery • Switching behavior independent of temperature • Dedicated to PFC applications • High forward surge capability • Operating Tj from -40 °C to 175 °C • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. • ECOPACK2 compliant component

文件：395.95 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

650 V, 10 A low VF power Schottky silicon carbide diode

Features • No or negligible reverse recovery • Switching behavior independent of temperature • Dedicated to PFC applications • High forward surge capability • Operating Tj from -40 °C to 175 °C • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. • ECOPACK2 compliant component

文件：395.95 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

650 V, 10 A power Schottky silicon carbide diode

Features • Less than 1 mm height package • High creepage package • No or negligible reverse recovery • Temperature independent switching behavior • High forward surge capability • Very low drop forward voltage • Power efficient product • ECOPACK2 compliant component Description This 10

文件：379.31 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

650 V, 10 A low VF power Schottky silicon carbide diode

Features • No or negligible reverse recovery • Switching behavior independent of temperature • Dedicated to PFC applications • High forward surge capability • Operating Tj from -40 °C to 175 °C • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. • ECOPACK2 compliant component

文件：395.95 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：PSC10065DY；Package：TO-220AC；Automotive 650 V power Schottky silicon carbide diode

文件：542.32 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：PSC10065GY；Package：D2PAK；Automotive 650 V power Schottky silicon carbide diode

文件：542.32 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

Automotive 650 V power Schottky silicon carbide diode

文件：542.32 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

600 V power Schottky silicon carbide diode

文件：96.23 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体