650 V, 10 A low VF power Schottky silicon carbide diode

Features • No or negligible reverse recovery • Switching behavior independent of temperature • Dedicated to PFC applications • High forward surge capability • Operating Tj from -40 °C to 175 °C • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. • ECOPACK2 compliant component

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650 V, 10 A power Schottky silicon carbide diode

Features • Less than 1 mm height package • High creepage package • No or negligible reverse recovery • Temperature independent switching behavior • High forward surge capability • Very low drop forward voltage • Power efficient product • ECOPACK2 compliant component Description This 10

文件：379.31 Kbytes 页数：12 Pages

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丝印：PSC10065DY；Package：TO-220AC；Automotive 650 V power Schottky silicon carbide diode

文件：542.32 Kbytes 页数：12 Pages

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Package：TO-220-2；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 650V 10A TO220AC

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650V 10A功率肖特基碳化硅二极管

This 10 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and • Less than 1 mm height package \n• High creepage package \n• No or negligible reverse recovery \n• Temperature independent switching behavior \n• High forward surge capability \n• Very low drop forward voltage \n• Power efficient product \n• ECOPACK2 compliant component;

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Package：8-PowerVDFN；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：650 V 10 A POWER SCHOTTKY SILICO

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Package：TO-220-2；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 650V 10A TO220AC

STMICROELECTRONICS

意法半导体