首页 >STP5NC70>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

STP5NC70Z

N-CHANNEL 700V - 1.8ohm - 4.6A TO-220/FP/D짼PAK/I짼PAK Zener-Protected PowerMESH?줚II MOSFET

DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested b

文件:348.72 Kbytes 页数:12 Pages

STMICROELECTRONICS

意法半导体

STP5NC70ZFP

N-CHANNEL 700V - 1.8ohm - 4.6A TO-220/FP/D짼PAK/I짼PAK Zener-Protected PowerMESH?줚II MOSFET

DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested b

文件:348.72 Kbytes 页数:12 Pages

STMICROELECTRONICS

意法半导体

STP5NC70ZFP

N-CHANNEL 700V - 1.8ohm - 4.6A TO-220/FP/D짼PAK/I짼PAK Zener-Protected PowerMESH?줚II MOSFET

DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested b

文件:348.72 Kbytes 页数:12 Pages

STMICROELECTRONICS

意法半导体

P5NC70Z

N-CHANNEL 700V - 1.8ohm - 4.6A TO-220/FP/D짼PAK/I짼PAK Zener-Protected PowerMESH?줚II MOSFET

DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested b

文件:348.72 Kbytes 页数:12 Pages

STMICROELECTRONICS

意法半导体

STB5NC70Z

N-CHANNEL 700V - 1.8ohm - 4.6A TO-220/FP/D짼PAK/I짼PAK Zener-Protected PowerMESH?줚II MOSFET

DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested b

文件:348.72 Kbytes 页数:12 Pages

STMICROELECTRONICS

意法半导体

供应商型号品牌批号封装库存备注价格
STMICROELEC
24+
2389
原装现货假一罚十
询价
ST
24+
TO-220F
5000
原装现货热卖
询价
ST
17+
TO-220F
6200
询价
ST/意法
23+
TO-220
50000
全新原装正品现货,支持订货
询价
ST
22+
TO-220
6000
十年配单,只做原装
询价
ST/意法
24+
NA/
3350
原厂直销,现货供应,账期支持!
询价
ADI
23+
TO-220
8000
只做原装现货
询价
ST/意法
22+
TO-220
97971
询价
ST
25+
TO-TO-220
37650
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
ST
NEW
TO-220F
8795
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订
询价
更多STP5NC70供应商 更新时间2025-12-26 8:01:00