N-CHANNEL 700V - 1.8ohm - 4.6A TO-220/FP/D짼PAK/I짼PAK Zener-Protected PowerMESH?줚II MOSFET

DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested b

文件：348.72 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 700V - 1.8ohm - 4.6A TO-220/FP/D짼PAK/I짼PAK Zener-Protected PowerMESH?줚II MOSFET

DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested b

文件：348.72 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 700V - 1.8ohm - 4.6A TO-220/FP/D짼PAK/I짼PAK Zener-Protected PowerMESH?줚II MOSFET

DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested b

文件：348.72 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 700V - 1.8ohm - 4.6A TO-220/FP/D짼PAK/I짼PAK Zener-Protected PowerMESH?줚II MOSFET

DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested b

文件：348.72 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体