N-CHANNEL 60V - 0.06ohm - 20A TO-220/TO-220FP STripFET II POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

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STMICROELECTRONICS

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.07Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.72 Kbytes 页数：2 Pages

ISC

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 18A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.125Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.68 Kbytes 页数：2 Pages

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N-channel 200V - 0.10廓 -18A- DPAK/TO-220/TO-220FP Low gate charge STripFET??Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters. Features ■ Excep

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STMICROELECTRONICS

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丝印：P20NK50Z；Package：TO-220；N-CHANNEL 500V - 0.23ohm - 20A TO-220/TO-247 Zener-Protected SuperMESH?줡ower MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such seri

文件：133.58 Kbytes 页数：7 Pages

STMICROELECTRONICS

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丝印：P20NK50Z；Package：TO-220；N-CHANNEL 500V -0.23 OHM - 17A TO-220/D2PAK/I2SPAK/TO-247

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such seri

文件：383.12 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.25Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.59 Kbytes 页数：2 Pages

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N-CHANNEL 500V - 0.20ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET

DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption

文件：532.76 Kbytes 页数：16 Pages

STMICROELECTRONICS

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N-CHANNEL 500V - 0.20ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET

DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption

文件：532.76 Kbytes 页数：16 Pages

STMICROELECTRONICS

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N-CHANNEL 500V - 0.22ohm - 20A TO-220/I2PAK FDmesh??Power MOSFET with FAST DIODE

Description The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. ■ High dv/dt and avalanche capabilities ■ 100 avalanche

文件：276.77 Kbytes 页数：9 Pages

STMICROELECTRONICS

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