首页 >STP12NK80FI>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-CHANNEL800V-0.65OHM-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESHPowerMOSFET Description ThesedevicesareN-channelZener-protectedPowerMOSFETsdevelopedusingSTMicroelectronicsSuperMESH™technology,achievedthroughoptimizationofSTswellestablishedstrip-basedPowerMESH™layout.Inadditiontoasignificantreductioninonresistance,thisdeviceisdesignedtoe | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor DESCRIPTION ·DrainCurrent:ID=10.5A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·motordrive, | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel800V-0.65廓-10.5A-TO-220-D2PAK-TO-247Zener-ProtectedSuperMESH??PowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-CHANNEL800V-0.651}-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESH?줡owerMOSFET N-CHANNEL800V-0.651}-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESH™PowerMOSFET ■TYPICALRos(on)=0.65Q ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALANCHETESTED ■GATECHARGEMINIMIZED ■VERYLOWINTRINSICCAPACITANCES ■VERYGOODMANUFACTURINGREPEATIBILITY APPLICATIONS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
N-CHANNEL800V-0.651}-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESH?줡owerMOSFET N-CHANNEL800V-0.651}-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESH™PowerMOSFET ■TYPICALRos(on)=0.65Q ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALANCHETESTED ■GATECHARGEMINIMIZED ■VERYLOWINTRINSICCAPACITANCES ■VERYGOODMANUFACTURINGREPEATIBILITY APPLICATIONS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
N-CHANNEL800V-0.651}-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESH?줡owerMOSFET N-CHANNEL800V-0.651}-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESH™PowerMOSFET ■TYPICALRos(on)=0.65Q ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALANCHETESTED ■GATECHARGEMINIMIZED ■VERYLOWINTRINSICCAPACITANCES ■VERYGOODMANUFACTURINGREPEATIBILITY APPLICATIONS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
N-CHANNEL800V-0.65ohm-10.5AI2SPAKZener-ProtectedSuperMESHPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-channel800V,0.65Ωtyp.,10.5AZener-protectedSuperMESH™PowerMOSFETinD2PAK,TO-220FP,TO-220andTO-247 Features ■Extremelyhighdv/dtcapability ■Improvedesdcapability ■100avalanchetested ■Gatechargeminimized ■Verylowintrinsiccapacitances ■Verygoodmanufacturingreliability Applications ■Switchingapplications Description ThesedevicesareN-channelZener-protected Pow | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-channel800V,0.65Ωtyp.,10.5AZener-protectedSuperMESH™PowerMOSFETinD2PAK,TO-220FP,TO-220andTO-247 Features ■Extremelyhighdv/dtcapability ■Improvedesdcapability ■100avalanchetested ■Gatechargeminimized ■Verylowintrinsiccapacitances ■Verygoodmanufacturingreliability Applications ■Switchingapplications Description ThesedevicesareN-channelZener-protected Pow | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor DESCRIPTION ·DrainCurrent:ID=10.5A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·motordrive, | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel800V-0.65廓-10.5A-TO-220-D2PAK-TO-247Zener-ProtectedSuperMESH??PowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-CHANNEL800V-0.65OHM-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESHPowerMOSFET Description ThesedevicesareN-channelZener-protectedPowerMOSFETsdevelopedusingSTMicroelectronicsSuperMESH™technology,achievedthroughoptimizationofSTswellestablishedstrip-basedPowerMESH™layout.Inadditiontoasignificantreductioninonresistance,thisdeviceisdesignedtoe | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-CHANNEL800V-0.651}-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESH?줡owerMOSFET N-CHANNEL800V-0.651}-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESH™PowerMOSFET ■TYPICALRos(on)=0.65Q ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALANCHETESTED ■GATECHARGEMINIMIZED ■VERYLOWINTRINSICCAPACITANCES ■VERYGOODMANUFACTURINGREPEATIBILITY APPLICATIONS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
N-CHANNEL800V-0.651}-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESH?줡owerMOSFET N-CHANNEL800V-0.651}-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESH™PowerMOSFET ■TYPICALRos(on)=0.65Q ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALANCHETESTED ■GATECHARGEMINIMIZED ■VERYLOWINTRINSICCAPACITANCES ■VERYGOODMANUFACTURINGREPEATIBILITY APPLICATIONS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
N-CHANNEL800V-0.651}-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESH?줡owerMOSFET N-CHANNEL800V-0.651}-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESH™PowerMOSFET ■TYPICALRos(on)=0.65Q ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALANCHETESTED ■GATECHARGEMINIMIZED ■VERYLOWINTRINSICCAPACITANCES ■VERYGOODMANUFACTURINGREPEATIBILITY APPLICATIONS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
N-CHANNEL800V-0.651}-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESH?줡owerMOSFET N-CHANNEL800V-0.651}-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESH™PowerMOSFET ■TYPICALRos(on)=0.65Q ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALANCHETESTED ■GATECHARGEMINIMIZED ■VERYLOWINTRINSICCAPACITANCES ■VERYGOODMANUFACTURINGREPEATIBILITY APPLICATIONS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
N-CHANNEL800V-0.651}-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESH?줡owerMOSFET N-CHANNEL800V-0.651}-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESH™PowerMOSFET ■TYPICALRos(on)=0.65Q ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALANCHETESTED ■GATECHARGEMINIMIZED ■VERYLOWINTRINSICCAPACITANCES ■VERYGOODMANUFACTURINGREPEATIBILITY APPLICATIONS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
N-channel800V,0.65Ωtyp.,10.5AZener-protectedSuperMESH™PowerMOSFETinD2PAK,TO-220FP,TO-220andTO-247 Features ■Extremelyhighdv/dtcapability ■Improvedesdcapability ■100avalanchetested ■Gatechargeminimized ■Verylowintrinsiccapacitances ■Verygoodmanufacturingreliability Applications ■Switchingapplications Description ThesedevicesareN-channelZener-protected Pow | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-CHANNEL800V-0.651}-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESH?줡owerMOSFET N-CHANNEL800V-0.651}-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESH™PowerMOSFET ■TYPICALRos(on)=0.65Q ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALANCHETESTED ■GATECHARGEMINIMIZED ■VERYLOWINTRINSICCAPACITANCES ■VERYGOODMANUFACTURINGREPEATIBILITY APPLICATIONS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
N-channel800V-0.65廓-10.5A-TO-220-D2PAK-TO-247Zener-ProtectedSuperMESH??PowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST-意法半导体 |
24+25+/26+27+ |
TO-220-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
ST |
23+ |
TO-220 |
8795 |
询价 | |||
ST |
07+/08+ |
TO-220-3 |
296 |
询价 | |||
SGS |
10+ |
TO220 |
42 |
进口原装-真实库存-价实 |
询价 | ||
ST |
2017+ |
TO-220 |
52145 |
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增 |
询价 | ||
ST |
17+ |
TO-220 |
5000 |
原装现货热卖 |
询价 | ||
ST |
17+ |
TO-220 |
6200 |
询价 | |||
ST |
2015+ |
TO220A |
12500 |
全新原装,现货库存长期供应 |
询价 | ||
ST |
16+ |
TO-220-3(直引 |
296 |
原装现货假一罚十 |
询价 | ||
ST |
23+ |
TO220 |
8820 |
全新原装优势 |
询价 |
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