STN2N10L

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.35Ω ■AVALANCHERUGGEDTECHNOLOGY ■SOT-223CANBEWAVEORREFLOWSOLDERED ■AVAILABLEINTAPEANDREELONREQUEST ■150°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HARDDISKDRIVER

STN2N10L

N-Channel 100-V (D-S) MOSFET

2N10L

DrainCurrentID=2A@TC=25C

EMBA2N10A

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS100V RDSON(MAX.)125mΩ ID14A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EMBA2N10AS

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: NChannelMOSFET UIS,Rg100%Tested Pb-FreeLeadPlating&HalogenFree

F2N10A

N-ChannelEnhancementMOSFET

Features •VDS=100V,ID=2A •RDS(ON)=220mΩ@VGS=10V(Typ.) •RDS(ON)=240mΩ@VGS=4.5V(Typ.) •HighPowerandcurrenthandingcapability •Leadfreeproductisacquired •SurfaceMountPackage MainApplications •BatteryProtection •LoadSwitch •PowerManagement

FIR2N10LTG

N-ChannelEnhancementModePowerMOSFET

HM2N10

N-ChannelEnhancementModePowerMOSFET

HM2N10B

N-ChannelEnhancementModePowerMOSFET

RFP2N10

2A,80Vand100V,1.05Ohm,N-ChannelPowerMOSFETs